| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable manufacture of thin-film transistors having excellent characteristics, by injecting impurities by non-mass-separating ion implantation directly or through an insulating thin film of a specific thickness, into the outside part of the first region of a semiconductor layer, and forming source/drain regions having a concentration higher than the impurity concentration. SOLUTION: Ion implantation is performed directly or through an insulating thin film of a thickness <=50 mm by a non-mass-separating ion implanter. Defects are produced in LDD regions 114 and source/drain regions 124. Besides, ion-implanted impurities are not yet activated. To this, a laser beam 130 such as XeCl, etc., is emitted from above to perform laser annealing. Since the LDD regions 114 and source/drain regions 124 are exposed alike, the laser beam is efficiently absorbed. Accordingly, defects generated by the ion implantation are efficiently restored, and TFTs having excellent characteristics become available. Since injection of H in to channel regions 104c is prevented, the characteristic change is reduced over aging of.</p> |
