| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric memory element, in which a manufacturing process of a TFT is isolated from the manufacturing process of a ferroelectric capacitor, and mutual processes do not exert influence upon other device. SOLUTION: A TFT is formed on an insulating substrate 42, and a lower part electrode 31 constituting a ferroelectric capacitor is connected with a source electrode 8 of the TFT, thereby forming a memory cell. A ferroelectric capacitor is manufactured by a manufacturing process which is different from the manufacturing process of the TFT. For example, a film is formed on a prescribed base by a desired thin film process, and exfoliation is performed from the base. |
