| 摘要 |
PROBLEM TO BE SOLVED: To suppress strain on an SiGe without injecting carbon by forming a gate electrode of a gate insulating film on a semiconductor layer made of SiGe containing nitrogen. and forming a source diffusion layer and a drain diffusion layer in the semiconductor layer at its parts on both sides of the gate electrode. SOLUTION: On the surface of a silicon substrate 10, element isolating films 12 of silicon oxide films are formed, and an element region 14 is fixed by the element isolating films 12. In the element region 14, a semiconductor layer 16 of SiGe containing nitrogen is formed. On the semiconductor layer 16, a gate insulating film 18 of a silicon oxide film is formed. On the insulating film 18, a gate electrode 20 of a polysilicon layer is formed. In the parts of the semiconductor layer 16 on both sides of the gate electrode 20, a source diffusion layer 22 and a drain diffusion layer 22 are formed in self matching with the gate electrode 20. The part of the semiconductor layer 16 under the gate electrode 20 becomes a channel 24. Since the radius of a nitrogen atom is approximately equal to that of a carbon atom, strain of the SiGe is suppressed.
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