| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface treatment device which is capable of very accurately and uniformly treating all the surface of a wafer. SOLUTION: An etching pot 1 is filled up with heated etching liquid 23, a wafer 7 is supported on the bottom of the pot as its periphery is sealed, and the etched surface of the wafer 7 facing upward is in contact with the etching liquid 23. The periphery of the wafer 7 in the pot 1 is heated by a jig heater 19 and a heating ring 5. After etching is carried out, the jig heater 19 serving as a heat source is thermally separated from the pot 1. A heating temperature of the jig heater 19 can be changed corresponding to the etching conditions of the wafer 7.
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