| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the positional accuracy of a plotting beam obtained when a pattern is plotted without the consideration of the deterioration of the alignment pattern of a final product. SOLUTION: Cross-shaped patterns 4a to 4d for correction are provided on the four corners of a photomask base plate 1. After an electron beam resist is applied on the photomask base plate 1, the positional coordinates of the patterns 4a to 4d are read. After the shape of a main size pattern 3a is plotted on the electron beam resist, the positional coordinates of the electron beam is corrected by adequately reading the positional coordinates of the patterns 4a to 4d in optional number of times and referring to the positional deviation from the positional coordinates of the patterns 4a to 4d for correction obtained before the pattern 3a is plotted. The reading of the patterns 4a to 4d, and the correction and the plotting of the position of the electron beam are repeatedly performed, so that a main pattern 2 with a specified shape is plotted on the base plate 1.</p> |
