ETCHING METHOD OF ORGANIC ANTI-REFLECTION FILM AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable a base layer to be hardly etched even if a large level difference is present and to lessen a dimensional conversion difference. SOLUTION: When an organic anti-reflection film 106 is subjected to dry etching, it is etched through a resist pattern 107 as a mask using a mixed etching gas of oxygen gas and halogen gas. The mixing ratio of halogen gas to mixed etching gas is lessened before or at a point of time when a WSix film 105 as a base layer of the anti-reflection film 106 is exposed.