| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor storage device of high speed and low power consumption which can automatically rewrite information by using a non-volatile semiconductor storage device as a means for executing aid or updating information when an error or the necessity of updating is generated in information stored in a read-only semiconductor storage device. SOLUTION: The semiconductor storage device is provided with the read-only semiconductor storage device 1 and the non-volatile semiconductor storage device 2 for storing the address data of an area (rewriting ROM area) 11-a to be corrected in the device 1 and correction data for correcting the data of the area 11-a in an electrically writable storage part 21-e, comparing the stored address data with an address 4 supplied from the external and outputting a decided result signal 3 from an address judgment circuit 21-a. When both the addresses coincide with each other, the device 1 is non-activated and the data of the area 11-a are substituted for the correction data stored in the storage part 21-e and the substituted correction data are outputted.</p> |
