| 摘要 |
PROBLEM TO BE SOLVED: To surely reduce particles easy to occur in a process for nitriding a titanium film, by depositing a Ti film on a semiconductor substrate, then introducing only, substantially, H2 gas, NH3 gas, and Ar gas into a chamber, for nitriding the Ti film by a plasma nitriding method. SOLUTION: In the same chamber 1 as where a Ti film is deposited, the Ti film deposited on a semiconductor substrate 3 is nitrided,a gas line A8 is supplied with Ar gas while a gas line B9 supplied with a mixed gas of H2 gas and NH3, and the mixed gas of them is introduced into the chamber 1. With the content of the mixed gas in the gas line B9 being H2, no Ti film is excessively nitrided in the process where it is nitrided while the chlorine contained in the Ti film is discharged from a nitride Ti film in a Ti film deposition process. Thus, on and after the process for nitriding the Ti film, the nitride Ti film is difficult to peel off the inside wall of the chamber and shower head, etc.
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