| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser which is easy to manufacture having good reproducibility and having low threshold current, high output, and stable transverse modes, and to provide its manufacturing method. SOLUTION: A first mirror reflectance adjustment layer (phase adjustment and also current block layer) 8 has an opening 11 for exposing a contact layer 7 in a substrate plane, and a second mirror reflectance adjustment layer (phase adjustment and also electrode layer) 9 is laminated, at least on a part of the contact layer 7 in the opening 11 and on a part of the first reflectance adjustment layer 8. In a surface luminous type semiconductor laser, the contact layer 7 is of a conductive type which is different from that of the first reflectance adjustment layer 8.
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