| 摘要 |
PROBLEM TO BE SOLVED: To produce a semiconductor device using a SiC wafer having relatively a large diameter. SOLUTION: A semiconductor substrate 10 is formed by mounting second Sic wafers 1, 2, which have a 2-inch diameter disc shape each and are bonded together, on the central part of one end of a first Sic wafer 11 having a 4-inch diameter disc shape. By moving the second wafer 12 on the first wafer 11, the second wafer 12 can be processed by various types of processing devices as a part of the semiconductor substrate 10. To bond the first wafer 11 and the second wafer 12 together, each surface of the first wafer 11 and the second wafer 12 are required to be processed to get mirror condition. After forming a silicon oxide film is formed respectively on each bonded surface of the two wafers, each silicon oxide film of the first wafer 11 and the second wafer 12 can be bonded by being pasted together and heated. Each orientation flat direction of the first wafer 11 and the second wafer 12 is required to be the same direction.
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