| 摘要 |
<p>The invention concerns an infrared semiconductor laser comprising a bottom electrode (10), and thereon, a stack (14) of layers in semiconductor material forming a waveguide comprising a gain region (16), itself comprising at least: an active zone with a least a quantum well to enable transitions between the sub-bands of current carriers capable of generating a coherent lighting mode, and an injection zone adjacent to the active zone. The stack comprises, in its portion opposite the electrode (10), a layer (20) adjacent to the gain region (16) and made conductive by doping, so as to form a top electrode co-operating with the bottom electrode to subject the stack to an electric field.</p> |
