发明名称 METHOD OF INTERNAL VOLTAGE GENERATION CONVERTIBLE FROM PUMPING CAPACITY TO CHARGE STORAGE CAPACITY
摘要 PURPOSE: A method of internal voltage generation convertible from pumping capacity to charge storage capacity is provided to supply stable internal voltage with increased charge storage capacity by converting pumping capacity to charge storage capacity when a pumping capacitor is not used for charge pumping. CONSTITUTION: A method of internal voltage generation convertible from pumping capacity to charge storage capacity includes the followings. A comparator compares reference voltage(Vof) and internal voltage(Vo). A controller receives the output signals(OSCEN) of the comparator and generates pumping capacitor operation signal(OSC), charge storage capacitor operation signal(OSC2) and free charge voltage authorization signal(PH1). A pumping capacitor(CP) receives authorization of the pumping capacitor operation signal(OSC). The primary NMOS transistor(SW1) connects the pumping capacitor(CP) and a charge storage capacitor(Cr) by the charge storage capacitor operation signal(OSC2).
申请公布号 KR20000059511(A) 申请公布日期 2000.10.05
申请号 KR19990007155 申请日期 1999.03.04
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 KIM, HA SU
分类号 G05F1/10;(IPC1-7):G05F1/10 主分类号 G05F1/10
代理机构 代理人
主权项
地址