A plasma processing system comprises an airtight process chamber; a lower electrode arranged to move freely in vertical directions in the process chamber and having a stage for holding an object to be processed; a power supply for supplying high-frequency power to the lower electrode; a lift for moving the lower electrode vertically; a conductive wall structure extending to the floor of the process chamber while substantially enclosing the lift at close distance; and a conductive material arranged around the lower electrode for electrically connecting the wall structure with the inner wall of the process chamber.
申请公布号
WO0059019(A1)
申请公布日期
2000.10.05
申请号
WO2000JP02081
申请日期
2000.03.31
申请人
TOKYO ELECTRON LIMITED;SUEMASA, TOMOKI;INAZAWA, KOUICHIRO;ONO, TSUYOSHI