发明名称 PLASMA PROCESSING SYSTEM
摘要 A plasma processing system comprises an airtight process chamber; a lower electrode arranged to move freely in vertical directions in the process chamber and having a stage for holding an object to be processed; a power supply for supplying high-frequency power to the lower electrode; a lift for moving the lower electrode vertically; a conductive wall structure extending to the floor of the process chamber while substantially enclosing the lift at close distance; and a conductive material arranged around the lower electrode for electrically connecting the wall structure with the inner wall of the process chamber.
申请公布号 WO0059019(A1) 申请公布日期 2000.10.05
申请号 WO2000JP02081 申请日期 2000.03.31
申请人 TOKYO ELECTRON LIMITED;SUEMASA, TOMOKI;INAZAWA, KOUICHIRO;ONO, TSUYOSHI 发明人 SUEMASA, TOMOKI;INAZAWA, KOUICHIRO;ONO, TSUYOSHI
分类号 H01L21/302;B01J19/08;H01J37/32;H01L21/3065;H05H1/46;(IPC1-7):H01L21/306 主分类号 H01L21/302
代理机构 代理人
主权项
地址