| 摘要 |
<p>A high quality thin film comparable to a bulk single crystal, and a semiconductor device with superior characteristics. A channel layer (11) is formed of a semiconductor, such as zinc oxide ZnO. The channel layer (11) is provided with a source (12), a drain (13), a gate (14) and a gate insulation layer (15), thus forming a FET. As for a substrate 16, a suitable one is selected according to the thin film material of the channel layer (11) and in consideration of compatibility between the lattice constants of the two materials. For example, if the base of the semiconductor of the channel layer is ZnO, then ScAlMgO4 or the like may be used for the substrate (16).</p> |
