METHOD FOR FORMING INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a wire of a semiconductor device is provided to prevent a bridge or a short-circuit from generating between wires. CONSTITUTION: An interlayer dielectric having a thickness of 10,000 to 20,000 angstroms is deposited on a poly-metal insulating layer(32) with a contact pattern(51) formed therein by using a chemical vapor deposition method. A contact hole is formed by etching the interlayer dielectric so that a contact pattern(51) is exposed. A metal film is formed on an upper portion of the interlayer dielectric and in the contact hole by using a chemical vapor deposition, the metal film being formed of W, Mo, Ni, Mg, Au and Ag. A wire(62) is formed by polishing the metal film and the interlayer dielectric by using a chemical-mechanical polishing method.