发明名称 |
Substrate for a power semiconductor module in an electric vehicle has a buffer layer of intermediate thermal expansion coefficient interposed between an insulating substrate and a heat sink |
摘要 |
A power module substrate comprises a buffer layer of intermediate thermal expansion coefficient interposed between an insulating substrate and a heat sink. A power module substrate has a buffer layer which is interposed between an insulating substrate and a heat sink and which has a surface area one to three times larger than that of the substrate. The buffer layer is formed of a material with a thermal expansion coefficient intermediate between those of the substrate and the heat sink.
|
申请公布号 |
DE10013189(A1) |
申请公布日期 |
2000.10.05 |
申请号 |
DE2000113189 |
申请日期 |
2000.03.17 |
申请人 |
MITSUBISHI MATERIALS CORP., TOKIO/TOKYO |
发明人 |
NAGATOMO, YOSHIYUKI;NAGASE, TOSHIYUKI;KUBO, KAZUAKI;SHIMAMURA, SHOICHI |
分类号 |
H01L23/373;H01L25/07;H01L25/18;H05K1/02;H05K1/03;H05K3/00;(IPC1-7):H01L23/14;H01L23/473 |
主分类号 |
H01L23/373 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|