| 摘要 |
A system for controlling process temperatures for semi-conductor wafers comprises a means to heat the wafer (180), a means to generate a plurality of ultrasonic vibrations in the wafer, a Sagnac interferometer (15) adapted to sense the ultrasonic vibrations and generate a wafer temperature signal responsive thereto, a means (210) to calculate the wafer temperature on the basis of the generated wafer temperature signal, and the means (220) to control the wafer heating means on the basis of the calculated wafer temperature. A method for controlling process temperatures for semi-conductor wafers comprises the steps of heating the wafer, generating a plurality of ultrasonic vibration in the wafer, sensing the ultrasonic vibrations with the Sagnac interferometer (15), generating the wafer temperature signal in response to sensing the ultrasonic vibrations with the Sagnac interferometer, calculating the wafer temperature on the basis of the generated wafer temperature signal, and controlling the heat applied to the wafer (180) on the basis of the calculated wafer temperature.
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