| 摘要 |
<p>A group III-nitride quaternary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first InGaAIN layer of a first conduction type formed substantially without phase separation, an InGaAIN active layer substantially without phase separation, and a third InGaAIN layer of an opposite conduction type formed substantially without phase separation.</p> |
