| 摘要 |
The manufacturing method has a metal film (113) applied to at least part (12) of the surface of the semiconductor diode(1), with the electrical contact (10) provided by galvanic thickening of the metal film. The metal film may be applied to the opposite surface of the diode to that mounted on a carrier substrate (2), the metal film thickened galvanically to provide a contact corresponding to the diameter of a bonding wire. |
