METHOD FOR MANUFACTURING METAL WIRE STRUCTURE TO RESTRICT VOID

摘要

PURPOSE: A method for fabricating a metal wire is provided to prevent a void from generating on a metal wire having a multi-level metallization structure. CONSTITUTION: A first metal wire(300) is formed through an interlayer dielectric(200) on a semiconductor substrate(100). After heat-treating the first metal wire, a metal interlayer dielectric(400) is formed to coat the heat-treated first metal wire. A second metal wire(500) is then formed to be electrically connected to the first metal wire. A lower film(330a) is formed on a lower portion of the first metal wire, the lower film consisting of an AlTi3. The first metal wire is aluminum. The heat-treating is performed at a temperature in range of 350 to 500°C and in a vacuum, a nitrogen gas atmosphere, or a hydrogen gas atmosphere.