| 摘要 |
PURPOSE: A NAND flash memory device is provided to reduce a chip size of NAND flash memory device by reducing the number of all transistors after collecting data input/output lines of page buffer. CONSTITUTION: A NAND flash memory device having many memory cell strings includes many bit lines, a data line, many latches, and a precharge part. The bit lines are connected to many memory cell string, respectively. The data line transmits input/output data. The latches are connected between the bit lines and the data lines, and store the input/output data. The precharge part(400) precharges the data line with a predetermined voltage level during a precharge operation prior to a recording operation. The latch transmits sufficient charge to precharge the data line to the data lines, during a data reading operation. Thereby, the NAND flash memory device reduces a chip size of NAND flash memory device by reducing the number of all transistors after collecting data input/output lines of page buffer(200).
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