| 摘要 |
<p>A reactive ion etching process controls the flow rate of at least one etchant gas used in said reactive ion etching process, the pressure of said at least one etchant gas; and the r.f. power used in said reactive ion etching process. The parameters of flow rate, pressure and r.f. power are selected to obtain a desired etch rate and/or a desired level of material re-deposition in the reactive ion etching process.</p> |
