发明名称 REACTION CHAMBER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A reaction chamber and method for fabricating a semiconductor device is to allow a reflecting angle of a reflector for reflecting heat in the reaction chamber to be changed, thereby uniformly coating a film on a wafer. CONSTITUTION: A reaction chamber(100) for fabricating a semiconductor device comprises a wafer supporting portion, a heater(120) for radiating heat at a lower portion of the wafer supporting portion, and a reflector(150) for reflecting heat from the heater to supply the heat to an upper face of a wafer(130). The reflector is symmetric with respect to an axis so that left and right ends of the reflector are moved upward and downward. The axis is connected with a driving portion(160) for driving the reflector. A method for fabricating a semiconductor device using the reaction chamber comprises the steps of observing a thickness of a film coated on the wafer, and controlling an angle of the reflector so as for the film to be uniformly formed.
申请公布号 KR20000059698(A) 申请公布日期 2000.10.05
申请号 KR19990007505 申请日期 1999.03.08
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 LIM, JEONG SU
分类号 H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/68
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