| 摘要 |
<p>A plasma processing system comprises an airtight process chamber; a lower electrode arranged to move freely in vertical directions in the process chamber and having a stage for holding an object to be processed; a power supply for supplying high-frequency power to the lower electrode; a lift for moving the lower electrode vertically; a conductive wall structure extending to the floor of the process chamber while substantially enclosing the lift at close distance; and a conductive material arranged around the lower electrode for electrically connecting the wall structure with the inner wall of the process chamber.</p> |
