CVD processing chamber

摘要

An apparatus is disclosed which comprises a vacuum processing chamber (133) for processing a substrate; a substrate support (135) for supporting the substrate at a substrate processing location (141) in said vacuum processing chamber (133); a gas inlet for supplying process gas to said processing chamber (133) for processing said substrate; wherein said chamber (133) includes one or more openings (131) in said inner chamber surface (265) which communicate with a vacuum duct (222) in a wall of said chamber (133), said vacuum duct (222) being connected to a vacuum system, wherein said inner chamber surface (265) includes a ceramic lining (234, 236) adjacent to said substrate processing location (141) to prevent a perimeter wall of a body (134) of said processing chamber (133) adjacent said processing location (141) from being directly exposed to a plasma present at said substrate processing location (141) during processing.