| 摘要 |
A fabrication method for a semiconductor device capable of adjusting a thickness of each portion of gate insulating film at both sides of a gate, which includes the steps of: providing a semiconductor substrate having a first region and a second region; forming a gate insulating film on the substrate; forming a conductive layer on the gate insulating film and patterning the conductive layer, for thereby forming a first gate and a second gate on the first and second regions, respectively; forming impurity areas in the first region at both sides of the first gate in order to reduce the velocity of oxidation; applying a re-oxidation process to the gate insulating film, for thereby forming each portion of the gate insulating film at both sides of the first gate thinner than each portion of the gate insulating film at both sides of the second gate; and respectively forming a source/drain region at both sides of the first and second gates.
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