发明名称 |
Semiconductor device with a reduced width gate dielectric and method of making same |
摘要 |
The present invention is directed to a semiconductor device having a reduced feature size and a method of making same. The device is comprised of a gate dielectric positioned above a semiconducting substrate, and a gate conductor positioned above said gate dielectric. The width of the gate dielectric being less than the width of the gate conductor. The device further comprises a plurality of sidewall spacers adjacent said conductor. The method is comprised of forming a gate dielectric above the surface of a semiconducting substrate, forming a gate conductor above the gate dielectric, and wet etching the gate dielectric to a finished width that is less than the width of the gate conductor.
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申请公布号 |
US6127251(A) |
申请公布日期 |
2000.10.03 |
申请号 |
US19980149398 |
申请日期 |
1998.09.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDENER, MARK I.;HAUSE, FREDERICK N.;MAY, CHARLES E. |
分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/51;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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