| 发明名称 |
Totally self-aligned transistor with polysilicon shallow trench isolation |
| 摘要 |
A totally self-aligned transistor with shallow trench isolation. A single mask is used to align the source, drain, gate and isolation areas. Overlay error is greatly reduced by the use of a single mask for these regions. Channel dopant deposited in the gate area is also self-aligned to the gate of the transistor.
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| 申请公布号 |
US6127717(A) |
申请公布日期 |
2000.10.03 |
| 申请号 |
US19980103181 |
申请日期 |
1998.06.24 |
| 申请人 |
ADVANCED MICRO DEVICES |
发明人 |
KRIVOKAPIC, ZORAN;MILIC, OGNJEN |
| 分类号 |
H01L21/265;H01L21/336;H01L21/763;H01L29/10;(IPC1-7):H01L29/00;H01L29/06 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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