| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ZnO film high in a film forming rate and low in resistivity at the time of producing a ZnO transparent electrically conductive film used as a transparent electrode. SOLUTION: In a vacuum chamber 1, gaseous Ar is introduced, and plasma 8 by arc discharge is generated from an anode 4 to a cathode 5 by a DC power source 6 to form a ZnO transparent electrically conductive film on the surface of a substrate 3 by an ion plating method. At this time, the ion plating is executed in such a manner that the sintered body 7 of ZnO is mixed with 1 to 3 wt.% Ga2O3. |
