发明名称 ELECTROLYTIC COPPER PLATING BATH AND SEMICONDUCTOR DEVICE FORMING COPPER WIRING BY THE PLATING BATH
摘要 PROBLEM TO BE SOLVED: To obtain a precipitated film excellent in both mechanical properties of tensile strength and elongation in particular in an electrolytic copper plating bath which does not contain sulfur compd. additives. SOLUTION: This copper plating bath is the one contg. (A) soluble copper salt, (B) polyamines which have plural amino groups in a molecule with methylene chains of ethylenediamine, diethylenetriamine or the like as fundamental skeletons and does not have the other functional groups, (C) phenanthrolines such as 1,10-phenanthroline and 2,2'-bipyridyl and (D) amino acids such as glycine and alanine. The concn. of phenanthrolines in (C) is controlled to 0.003 to 3 mmol/L. In the case of a copper-polyamines complex bath, when phenanthrolines and amino acids are jointly used, and phenanthrolines are blended in the range of the concn. of a trace amt., both the tensile strength and elongation of a precipitated film can satisfactorily be improved.
申请公布号 JP2000273684(A) 申请公布日期 2000.10.03
申请号 JP19990082823 申请日期 1999.03.26
申请人 ISHIHARA CHEM CO LTD 发明人 UCHIDA MAMORU;OKADA TAKASHI;NAWAFUNE HIDEMI;MIZUMOTO SHOZO;KITAMURA KOJI
分类号 C25D3/38;C25D7/12;H01L21/288;(IPC1-7):C25D3/38 主分类号 C25D3/38
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