发明名称 |
An isolation collar nitride liner for DRAM process improvement |
摘要 |
<p>A method of fabricating a trench cell capacitor can be used in the formation of a DRAM cell. In one embodiment, a trench is formed within a semiconductor substrate. The trench is lined with a dielectric layer, e.g., an ONO layer. After lining the trench, a collar is formed in an upper portion of the trench by forming an oxide layer in the upper portion. A nitride layer on the oxide layer. The trench is then filled with semiconductor material. For example, a semiconductor region can be epitaxially grown to fill the trench. <IMAGE></p> |
申请公布号 |
EP1041623(A2) |
申请公布日期 |
2000.10.04 |
申请号 |
EP20000104798 |
申请日期 |
2000.03.06 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GRAIMANN, CHRISTOFF;MAZURE, CARLOS A.;DIESELDORFF, CHRISTIAN;SCHULZ, ANGELIKA;BOIT, CHRISTIAN DR. |
分类号 |
H01L27/108;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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