| 摘要 |
Apparatus and method for providing a modulated-bias plasma are described. In particular, an RF source or collector includes one or more sources to provide differing driving frequencies or bias frequencies, respectively. These frequencies, over time, interfere with one another to produce beating at one or more controllable, infinitely variable beat frequencies. As a beat frequency has significantly fewer cycles per second than a driving or bias frequency, a modulated-bias plasma may be provided without turning power on and off as in conventional "pulsed" plasma systems. Beat frequencies facilitate modulation of the driving or bias frequencies, which may lie within a relatively narrow frequency band. Also, the use of a plurality of driving or bias frequencies facilitates use of more conventional RF sources or collectors owing to lower power requirements at each frequency. In accordance therewith, apparatus and method described may be employed for plasma etching and/or plasma enhanced vapor deposition.
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