| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a silicon single crystal, making it possible to expand an OSF area on the whole surface of a wafer and inhibit the generation of a Grown-in defect in a simple production process. SOLUTION: In this method for growing a silicon single crystal by CZ method, the characteristic comprises doping the single crystal with nitrogen so that oxidation- induced stacking faults are generated on the whole surface of the wafer or so that the wafer surface comprises the oxidation-induced stacking faults, oxygen-depositing areas and, if necessary, further oxygen deposit-controlling areas, when a high temperature oxidation treatment is applied. The silicon single crystal is preferably grown at a pulling speed of 0.4 to 0.8 time the maximum pulling speed. In order to improve the electric characteristics of the silicon single crystal, the silicon single crystal is preferably grown in a crystal oxygen concentration of <=9×1017 atoms/cm3. It is preferable to apply a treatment for outward diffusing oxygen to the silicon wafer made from the silicon single crystal. The silicon wafer is cut out from the silicon single crystal grown by the CZ method and doped with the nitrogen, and generates the oxidation-induced stacking faults in a density of >=103/cm2 on the surface, when a high temperature oxidation treatment is applied.
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