COATING SOLUTION FOR FORMING SILICA-BASED COATING FILM, PRODUCTION OF SILICA-BASED COATING FILM, SILICA-BASED COATING FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a coating solution for formation of silica-based coating film capable of producing a silica-based coating film having good film-forming property and low dielectric constant and provide a method for producing the silica-based coating film and a semiconductor device having the silica-based coating film and high reliability. SOLUTION: This coating solution for formation of a silica-based coating film comprises (A) a polysiloxane containing >=20 wt.% polymer having >=10,000 molecular weight and produced by subjecting an alkoxysilane compound represented by the formula R1nSi(OR2)4-n [R1 is a 1-6C alkyl group or a 6-10C aryl group and plural R1 may be same or different and R2 is a 1-10C alkyl group and plural R2 may be same or different and (n) is an integer of 0-2] and (B) a solvent. This method for producing the silica-based coating film comprises applying the coating solution for formation of the silica-based coating film onto a substrate, drying the solution at 50-350 deg.C and heating and curing the dried coating film at 200-600 deg.C under nitrogen atmosphere. This semiconductor device has the silica-based coating film.