| 摘要 |
A synchronous memory comprising: a memory cell array being comprised of a plurality of memory cells; a clock control circuit for receiving a first clock signal, a second clock signal, and a third clock signal, and for generating an internal clock signal, a plurality of control signals, and a plurality of flag signals; a first register circuit for storing a plurality of input data bits in response to the internal clock signal and the control signals; a second register circuit for storing the flag signals in response to the internal clock signal and the control signals; a write drive circuit for writing the input data bits passing through the first register circuit into the memory cell array in response to the flag signals during a write cycle; a sense amplifier circuit coupled to the memory cell array; an address comparator circuit for receiving read and write address signals and for generating a first, a second, and a third combination signals; and a switching circuit for transferring the input data bits passing through the first register circuit and the flag signals passing through the second register circuit to output terminals of the device.
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