发明名称 MAGNETRON SPUTTERING DEVICE
摘要 PROBLEM TO BE SOLVED: To retain discharge under relatively low gas pressure and to form a film with high controllability by forming the magnetron magnetic field on the surface of a target at the magnet part in a vacuum vessel, blowing off gas for discharge toward the plane of the target, generating discharge and executing sputtering. SOLUTION: A vacuum vessel 16 is connected to a vacuum pump 18 via a gate valve 17, the inside thereof is set with a substrate 15 via a substrate holder 19, oppositely thereto, a target 21 is arranged on a backing plate 23, and the circumference thereof is provided with an earth shield 24. The magnetron magnetic field is formed on the surface of the target 21 by a magnet 22, discharge gas of Ar or the like is fed from nozzles 14, D C or high frequency voltage is applied on the target 21 from a power source 26, discharge is generated, and sputtering is executed by the generated ions. At this time, the center axes of the blow-off of the plural nozzles 14 fitted to a distributor 13 are allowed to place in the plane of the target 21. In this way, gaseous molecular density in the surface of the target 21 is increased, and discharge is made maintainable under low gas pressure.
申请公布号 JP2000273624(A) 申请公布日期 2000.10.03
申请号 JP19990079140 申请日期 1999.03.24
申请人 HITACHI LTD 发明人 KIYONO TOMOYUKI;UMEHARA SATOSHI
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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