发明名称 |
Hermetically sealed microelectronic device and method of forming same |
摘要 |
A microelectronic device is hermetically sealed at the wafer level. A substrate is provided having associated electronics and at least one metal bonding pad. A dielectric layer, such as pyrex glass film, is sputter deposited atop the substrate to form a glass/metal seal. A glass film is thereafter planarized, preferably by chemical-mechanical polishing, to remove surface variations. A cover wafer is thereafter anodically bonded to the dielectric layer/glass film so as to define a sealed cavity for housing and protecting the substrate electronics. The resultant microelectronic device is packaged in its own hermetically sealed container at the wafer level.
|
申请公布号 |
US6127629(A) |
申请公布日期 |
2000.10.03 |
申请号 |
US19940316753 |
申请日期 |
1994.10.03 |
申请人 |
FORD GLOBAL TECHNOLOGIES, INC. |
发明人 |
SOORIAKUMAR, KATHIRGAMASUNDARAM;MEITZLER, ALLEN HENRY;MCCARTHY, SHAUN LEAF;HAEBERLE, RUSSELL J. |
分类号 |
H01L21/50;H01L23/08;(IPC1-7):H05K5/06 |
主分类号 |
H01L21/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|