发明名称 Hermetically sealed microelectronic device and method of forming same
摘要 A microelectronic device is hermetically sealed at the wafer level. A substrate is provided having associated electronics and at least one metal bonding pad. A dielectric layer, such as pyrex glass film, is sputter deposited atop the substrate to form a glass/metal seal. A glass film is thereafter planarized, preferably by chemical-mechanical polishing, to remove surface variations. A cover wafer is thereafter anodically bonded to the dielectric layer/glass film so as to define a sealed cavity for housing and protecting the substrate electronics. The resultant microelectronic device is packaged in its own hermetically sealed container at the wafer level.
申请公布号 US6127629(A) 申请公布日期 2000.10.03
申请号 US19940316753 申请日期 1994.10.03
申请人 FORD GLOBAL TECHNOLOGIES, INC. 发明人 SOORIAKUMAR, KATHIRGAMASUNDARAM;MEITZLER, ALLEN HENRY;MCCARTHY, SHAUN LEAF;HAEBERLE, RUSSELL J.
分类号 H01L21/50;H01L23/08;(IPC1-7):H05K5/06 主分类号 H01L21/50
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