| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique by which a thin film of high quality is formed, and also, the gas of a CVD raw material or the like is hard to leak to the circumference at a low cost. SOLUTION: In a thin film forming device provided with a substrate 1, a substrate holder device holding the substrate and a device imparting a gaseous atmosphere on the surface of the substrate held by the substrate holder device 7 and forming a thin film on the substrate by the cracking of the atmospheric gas, the upper face of the substrate held by the substrate holder device and the upper face of the substrate holder device are made being on the approximately same plane.
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