发明名称 |
Porous region removing method and semiconductor substrate manufacturing method |
摘要 |
This invention is to ensure a high planarity of an underlying layer after a porous layer is removed. A substrate to be processed is dipped in an etchant. In the first step, pores in the porous Si layer are filled with the etchant by supplying an ultrasonic wave. In the second step, supply of the ultrasonic wave is stopped, and the pore walls are thinned by the etching function. In the third step, the ultrasonic wave is supplied again to break the porous layer at once.
|
申请公布号 |
US6127281(A) |
申请公布日期 |
2000.10.03 |
申请号 |
US19980211559 |
申请日期 |
1998.12.15 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAGUCHI, KIYOFUMI;YANAGITA, KAZUTAKA |
分类号 |
H01L21/02;H01L21/306;H01L21/762;H01L27/12;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|