发明名称 MATERIAL FOR FORMING THIN FILM
摘要 PROBLEM TO BE SOLVED: To make a material into a relatively large scale by a CP method, a casting method or the like, to execute sintering under the high temp. condition, to increase its density and to uniformize it by allowing an SnO2 based sintered body to contain Ga, Bi, Nb, Mn, Fe, Ni, Co, Ta or the like as oxides by specified amounts. SOLUTION: An SnO2 sintered body is incorporated with one or more kinds among Ga, Bi, Nb, Mn, Fe, Ni, Co and Ta by <=20 wt.% expressed in terms of oxides, preferably, the content of Sb2O5 is controlled to 0 to 10 ppm to obtain a material for thin film formation having >=4.0 g/cm3, preferably >=5.0 g/cm3 sintered density. In particular, by using Nb, Mn, Fe, Ni, Co or the like as additives, >=6.6 g/cm3 sintered density can be attained, and the form of X2O5 oxide is preferably assumed. The sintered body is obtd. by subjecting the compacted body of a metal having a prescribed compsn. or the oxide thereof to sintering at about >=1300 deg.C in the air or in an oxygen atmosphere. By executing sputtering with this as a target, a transparent electrically conductive film of high quality can inexpensively be formed.
申请公布号 JP2000273622(A) 申请公布日期 2000.10.03
申请号 JP19990084431 申请日期 1999.03.26
申请人 MITSUI MINING & SMELTING CO LTD 发明人 HAYASHI HIROMITSU;ONO NAOKI
分类号 G09F9/30;C23C14/08;C23C14/34;(IPC1-7):C23C14/34 主分类号 G09F9/30
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