发明名称 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium
摘要 A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent elemets Ag, In, Te and Sb with the respective atomic percent (atom. %) of alpha , beta , gamma and delta thereof being in the relationship of 2</= alpha </=30, 3</= beta </=30, 10</= gamma </=50, 15</= delta </=83 and alpha + beta + gamma + delta =100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, Te and Sb with the respective atomic percent of alpha , beta , gamma and delta thereof being in the relationship of 0< alpha </=30, 0< beta </=30, 10</= gamma </=50, 10</= delta </=80, and alpha + beta + gamma + delta =100, and is capable of recording and erasing information by utilizing the phase changes of a recording material in the recording layer. A method of fabricating the above phase-change type optical recording medium is also provided.
申请公布号 US6127016(A) 申请公布日期 2000.10.03
申请号 US19970943601 申请日期 1997.10.03
申请人 RICOH COMPANY, LTD. 发明人 YAMADA, KATSUYUKI;IWASAKI, HIROKO;IDE, YUKIO;HARIGAYA, MAKOTO;KAGEYAMA, YOSHIYUKI;DEGUCHI, HIROSHI;TAKAHASHI, MASAETSU;HAYASHI, YOSHITAKA
分类号 B22F1/00;B22F3/10;B32B3/00;B32B3/02;C22C1/04;C23C14/06;C23C14/34;G11B7/243;G11B7/253;G11B7/2534;G11B7/254;G11B7/2542;G11B7/258;G11B7/2585;G11B7/259;G11B7/2595;G11B7/26;(IPC1-7):B32B3/00 主分类号 B22F1/00
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