发明名称 Solid state image pickup device and method for manufacturing the same
摘要 A solid state image pickup device including implanting impurity ions into a planarizing layer and/or a microlens layer thereon for changing a refractive index thereof, and method for fabricating such a device. The planarizing layer and the microlens layer are formed over components of the solid state image pickup device including a plurality of photoelectric conversion regions and charge coupled device (CCD) regions, each charge coupled device transferring an image charge generated in the photoelectric conversion regions in one direction.
申请公布号 US6127668(A) 申请公布日期 2000.10.03
申请号 US19970001941 申请日期 1997.12.31
申请人 LG SEMICON CO., LTD. 发明人 BAEK, EUY HYEON
分类号 H01L27/14;H01L27/146;H01L27/148;H01L31/0232;H04N5/335;H04N5/359;H04N5/369;H04N5/3722;H04N5/3728;(IPC1-7):H01J40/14 主分类号 H01L27/14
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