| 摘要 |
PURPOSE: An over-current protection circuit of a power semiconductor device is provided to protect a power semiconductor device by detecting and controlling an over-current. CONSTITUTION: A voltage detection portion is connected with a collector of An IGBT(Insulated-Gate Bipolar Transistor). The voltage detection portion has a diode(D1), a photo coupler(C1), and resistances(R1,R2) to detect a voltage. A driving portion applies a driving and control signal to the IGBT. The driving portion is formed with a photo coupler(PC2) and resistances(R3,R4). A delay portion delays a PWM signal. A logic portion receives a voltage detection signal(Vs), a pulse with modulation signal(A), a driving signal(Ad) and outputs a driving and stop signal and an over-current detection signal.
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