| 摘要 |
PURPOSE: A method for forming a polycide gate is provided to be capable of have reduced residue and good profile by suitably controlling etching gas and etching conditions. CONSTITUTION: The method for forming a gate structure on a semiconductor substrate includes the following steps. A layer of a gate material is formed on the semiconductor substrate, and a patterned mask layer is formed on the layer of the gate material opposite the substrate. The layer of the gate material is then etched with an etching gas including a mixture of chlorine gas(Cl2) and oxygen gas(O2) using the patterned mask layer as an etching mask. In particular, the step of forming the layer of the gate material can include the steps of forming a polysilicon layer on a surface of the semiconductor substrate, and forming a silicide layer on the polysilicon layer opposite the substrate.
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