| 摘要 |
PURPOSE: A non-volatile memory cell is provided to immediately give any IC circuit a good logic signal in case of power-up of the non-volatile memory cell, and memories a received binary signal as a non-volatile signal by responding to a voltage variation from a power-supply including a non-volatile memory. CONSTITUTION: A non-volatile memory(120) is connected between the first and second power buses for providing a programming voltage higher than an operation voltage. The non-volatile memory includes a memory circuit connected between the first and second power buses. The memory circuit includes an input node, an output node, and a non-volatile element connected to the input/output nodes, and responds to an input binary signal from an input node by latching the input binary signal. The non-volatile element responds to a programming voltage between the first and second power buses by memorizing the first and second state as a non-volatile state. After a power provided to the first and second power buses is interrupted, the non-volatile element is latched under a binary state.
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