METHOD OF FORMING METAL LINE OF SEMICONDCUTOR DEVICE

摘要

PURPOSE: A formation method of metal interconnections is provided to reduce a contact resistance by increasing contact area between a substrate and a metal wire. CONSTITUTION: An insulating layer(23) is formed on a semiconductor substrate(21) having a junction region(27). A contact hole is formed by patterning the insulating layer(23) to expose the junction region(27). A first metal wire(29) containing a silicon of 0.5¯3 weight percents and a second metal wire(31) without containing a silicon are sequentially formed on the resultant structure so as to electrically connect to the junction region(27). After annealing the resultant structure, the second metal wire(31) and the first metal wire(29) are seqeuntially etched.