SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A sense-amp of a semiconductor memory device is provided to ensure a sufficient sensing margin in case of a reading operation, and enhances a sensing speed by making a precharge circuit of sense-amp supply the same current in a sensing period. CONSTITUTION: A data line corresponds to a cell. A dummy data line is compared with a voltage level of the data line. A reference voltage generator(100) provides a reference voltage compared with a voltage level of the data line to the dummy data line. The reference voltage generator(100) includes a first bias part, a first pass part, and a first precharge part. The first bias part generates a reference voltage according to an activated sensing signal. The first pass part forms a current passage after receiving the reference voltage. The first precharge part precharges the dummy data line. A sensing voltage generator (200) generates a sensing voltage provided from a data line of the selected cell. A differential amplifier(300) amplifies a difference between the sensing voltages. The sensing voltage generator(200) includes a second bias part, a second pass part, and a second precharge part. The second bias part generates a reference voltage according to the sensing signal. The second pass part forms a current path after receiving the reference voltage. The second precharge part precharges the dummy data line.