| 摘要 |
PURPOSE: A method for manufacturing an acceleration sensor is provided to prevent a damage of a piezoresistance material of a sensor by forming a protective layer for protecting a metal layer on the metal layer. CONSTITUTION: A piezoresistance material(63c) is formed on a silicon wafer. A metal layer(64c) is deposited on an upper portion of the piezoresistance material(63c) through a contact hole. A protective layer(70) having an etching selection ratio larger than the silicon wafer is deposited on the metal layer(64c). A front face of the silicon wafer is etched after an etching window of the front face of the silicon wafer is formed. The protective layer(70) is removed by using a plasma etching method.
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