METHOD OF FABRICATING POLYSILICON PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A formation method of polysilicon patterns is provided to easily achieve depth of focus margin and to simplify the manufacturing process by using a polysilicon and an etched oxide pattern as a mask. CONSTITUTION: After sequentially depositing a first oxide layer(12), a first polysilicon(13), a second oxide layer(14) and a second polysilicon(15) on a semiconductor substrate(11), the second polysilicon(15) is etched by using a photoresist pattern(16) as a mask. After removing the photoresist pattern(16), the second oxide layer(14) is then etched by using the etched second polysilicon pattern as a mask. The first polysilicon(13) is then etched by using the etched second oxide pattern as a mask.