METHOD FOR FORMING BARRIER METAL LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A formation method of an anti-diffusion layer is provided to prevent a corrosion of lower layer due to TiCl4 gas used as a deposition source by using TiN/TiSi2 films as the anti-diffusion layer. CONSTITUTION: An interlayer dielectric(11) having a contact hole is formed on a silicon substrate(10). A TiNx film(12) is formed on the entire surface of the resultant structure by using a PVD(physical vapor deposition). The resultant structure is loaded a reactor of CVD(chemical vapor deposition). By heating the TiN reactor, the rear surface of the TiNx film(12) is transferred to a TiSi2 film(12b), and the front surface of the TiNx film is transferred to a TiN film(12a). Then, a second TiN film(13) is formed on the resultant structure.